PART |
Description |
Maker |
MDD310-22N1 MDD310 MDD310-08N1 MDD310-12N1 MDD310- |
High Power Diode Modules 305 A, 1600 V, SILICON, RECTIFIER DIODE TV 100C 100#22D SKT RECP Thyristor and Rectifiers Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
MDD250-16N1 MDD250 MDD250-08N1 MDD250-12N1 MDD250- |
High Power Diode Modules 290 A, 1200 V, SILICON, RECTIFIER DIODE Thyristor and Rectifiers Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
MDD26 |
HIgh Power Diode Modules
|
IXYS Corporation
|
MDD44 |
HIgh Power Diode Modules
|
IXYS Corporation
|
RM150CZ-24 RM150DZ-24 RM150UZ-24 RM150CZ-2H RM150D |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM30CZ-24 RM30DZ-24 RM30CZ-2H RM30DZ-2H |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
VBO54-12NO7 VBO54-14NO7 VBO54-16NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
VBE17-12NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
MDD26-18N1B MDD26 MDD26-08N1B MDD26-12N1B MDD26-14 |
Diode Modules Thyristor and Rectifiers Modules Diode Modules 36 A, 1400 V, SILICON, RECTIFIER DIODE, TO-240AA
|
IXYS[IXYS Corporation] IXYS, Corp.
|
TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|